Print Page
BSC010NE2LSIATMA1
Power MOSFET, N Channel, 25 V, 100 A, 0.00105 ohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC010NE2LSIATMA1
Newark Part No.47Y7991
Also Known AsBSC010NE2LSI, SP000854376
Technical Datasheet
Packaging Options
7,038 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.795 |
| 10+ | $0.795 |
| 25+ | $0.795 |
| 50+ | $0.795 |
| 100+ | $0.795 |
| 250+ | $0.795 |
| 500+ | $0.795 |
| 1000+ | $0.763 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.80
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC010NE2LSIATMA1
Newark Part No.47Y7991
Also Known AsBSC010NE2LSI, SP000854376
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
On Resistance Rds(on)900µohm
Drain Source On State Resistance1050µohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd96W
Gate Source Threshold Voltage Max2V
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Alternatives for BSC010NE2LSIATMA1
6 Products Found
Product Overview
The BSC010NE2LSI is a N-channel Power MOSFET features reduced power losses and increased efficiency for all load conditions. With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency and system in package. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solution applications.
- Optimized for high performance buck converter
- Monolithic integrated Schottky like diode
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- 100% Avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free
- Reduces the number of phases in multiphase converters
- Green device
- Save space with smallest packages like CanPAK™
- Minimize EMI in the system making external snubber networks obsolete and products easy to design-in
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
900µohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
1050µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
96W
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate