High-power solutions for DC electric vehicle charging
With the ever-growing number of electric vehicles on the road and pressure from governments to reduce vehicle emissions to zero by 2050 at the latest, there is a great need for more efficient charging solutions.
As various consumer studies show, the acceptance of electromobility depends on a large extent on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Already today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine.
As the market leader in power electronics, Infineon helps you realize energy-efficient DC fast charging designs. Benefit from one of the most comprehensive, ready-to-implement one-stop product and design portfolios on the market, covering the full range of power conversion, microcontrollers, security, auxiliary power supply, and communications.
Advanced solutions from control to sensing to next level security and connectivity
For DC EV charging designs up to 150 kW, Infineon’s discrete products offer the best price/performance ratio. This include the 600 V CoolMOS™ SJ MOSFET P7 and CFD7 families, 650 V IGBT TRENCHSTOP™ 5 and 1200 V CoolSiC™ MOSFET. The unparalleled benefits of our CoolMOS™ and CoolSiC™ MOSFETs include high-frequency operation, high power density and reduced switching losses that enable you to achieve high efficiencies in any battery charging system. Our portfolio of high voltage switches is complimented by 650 V and 1200 V CoolSiC™ Schottky diodes. Since every switch needs a driver, and every driver needs to be controlled, we also offer the matching EiceDRIVER™ gate driver as well as XMC™ and AURIX™ microcontrollers for EV charging designs. OPTIGA™ products complete the portfolio and ensure data protection and security. Chargers in the power range above 50 kW are typically built with IGBTs CoolSiC™ MOSFETs and diode power modules, e.g. CoolSiC™ Easy Modules, IGBT EconoPACK™ and the IGBT EconoDUAL™ family. Charger piles with a capacity of more than 100kW are usually built in a modular approach with stacked sub-units. Already today, these sub-units have reached a capacity of 20-50 kW each and will go beyond that in future designs.
1200 V CoolSiC™ MOSFET Module
The EasyDUAL™ 2B 1200 V, 6 mΩ half-bridge module with CoolSiC™ MOSFET, NTC temperature sensor and PressFIT contact technology allows for highest efficiency for reduced cooling efforts, higher frequency operation and increased power density.
The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 is ideal for DC-DC converters or DC-AC inverters. It offers in comparison to traditional silicon (Si) based switches the lowest gate charge and device capacitance levels, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
The IMW65R048M1H CoolSiC™ MOSFET 650 V is optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance, reduces complexity and enables smaller system size.
Every switch needs a driver, and the right driver makes a difference. The EiceDRIVER™ Compact isolated driver family (i.e. 1ED31xx) is available with Miller clamp or separate output function. It offers reinforced isolation options (VDE-11 & UL 1577) and high current capability (14 A / 9 A).
The AURIX™ microcontroller TC3xx family with its up to hexa-core high performance architecture and its advanced features for connectivity, security and functional safety, is ideally suited for a wide field of automotive and industrial applications such as on board chargers and DC-DC converters.
The Infineon current sensors provide accurate and stable current measurement up to 120A. We offer eight different derivatives 25A, 50A, 75A as well as 120A - both, standard or UL certified versions. The sensors are intended for use in high-voltage industrial applications such as electric drives, photovoltaic inverters, power supplies or battery management systems.
The REF-DAB11KIZSICSYS is a CLLC resonant DC/DC converter board able to provide up to 11 kW at 800 V output voltage. With its highly efficient bi-directional power flow capability and soft switching characteristics it is the ideal building block to speed up the fast prototyping of any EV charger and ESS project. This reference design provides a complete set of design files which is based on fully characterized hardware (not for sale yet). It proves that CoolSiC™ MOSFETs like the featured IMZ120R030M1H driven by 1EDC20I12AH are the perfect choice to combine cost-effective power density with highest reliability.