Delivering reliable and cost-effective top performance
Megatrends like digitalization, urbanization, and electro mobility lead to increased power consumption, pushing energy efficiency into focus. Infineon responds by offering full system solutions from one source - building no longer only on its renowned silicon technology, but also on innovative wide-bandgap devices such as SiC-based CoolSiC™ MOSFETs.
Infineon’s CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide (SiC) such as the capability to operate at higher voltages, temperature and frequencies. By adding unique features Infineon manages to further increase the device performance. Applying Infineon’s superior TRENCH technology, the use of CoolSiC™ MOSFETs guarantees lowest losses in the application and the highest reliability in operation.
CoolSiC™ MOSFETs are suitable for high temperature and harsh operations. Resultingly, a simplified and cost-effective deployment of highest system efficiency in a broad range of applications is possible.
Supports highest efficiency in 24/7 operation and cuts energy losses by 50%
Server power supply
OPEX savings by increased energy efficiency with up to 30% lower losses
Fast EV chargers
Electric vehicles being charged 2-times faster
Losses reduced by 50% for extra energy
Telecom power supply
Simplified design and fit for harsh 5G environments
Doubling inverter power at the same inverter weight
NEW packaging variant: CoolSiC™ MOSFET 650V in D2PAK 7pin
Optimized switching behavior at higher currents
Commutation robust fast body diode with low Qrr
Superior gate oxide reliability
Tj,max=175°C and excellent thermal behavior
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers (recommended driving voltage: 0V-18V)
Kelvin source provides up to 4 times lower switching losses
The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperatures and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
150mil 16-pin DSO The EiceDRIVER™ 2EDi, dual-channel isolated product family of gate driver ICs, is designed for robust operation in high performance CoolMOS™, CoolSiC™ and OptiMOS™ MOSFET half-bridges.
3300W CCM bidirectional totempole PFC unit using CoolSiC™ 650V , 600V CoolMOS™ C7 and digital control with XMC™
This evaluation board is a system solution for a bridgeless totem-pole power factor corrector (PFC) with bidirectional power capability. The EVAL_3K3W_TP_PFC_SIC evaluation board is addressing applications that require high efficiency (~99%) and high power density (72W/in3) such as high-end server and telecom. In addition, the bidirectional power flow capability allows this design to be used in battery chargers or battery formation applications.
3 kW SMPS solution targeting the Open Compute V3 rectifier specifications
This design introduces a complete Infineon system solution for a 3 kW power supply unit (PSU) targeting the OCP V3 rectifier specifications for servers and data centers. The PSU comprises a front-end AC-DC bridgeless totem pole converter followed by a back-end DC-DC isolated half-bridge LLC converter. The front-end totem pole converter provides power factor correction (PFC) and total harmonic distortion (THD). The LLC converter provides safety isolation and a tightly regulated output voltage.
Complete power supply targeting the Open Compute V3 rectifier specifications
Very high peak efficiency
Bridgeless totem-pole PFC with CoolSiC™
Half-bridge LLC with CoolMOS™ and OptiMOS™
Full digital control with XMCTM microcontrollers
Open Compute V3 rectifier (PSU) form factor (overall dimensions)
95 % peak of efficiency (fan not included) at 230VAC
Very high efficiency combining CoolSiC™, CoolMOS™ and OptiMOS™