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ONSEMI 2N5088BU
Bipolar (BJT) Single Transistor, NPN, 30 V, 100 mA, 625 mW, TO-92, Through Hole
- Manufacturer:
- ONSEMI ONSEMI
- Manufacturer Part No:
- 2N5088BU
- Newark Part No.:
- 83C3271
- Technical Datasheet:
- 2N5088BU Datasheet
- ECAD / MCAD
-
Product Overview
The 2N5088BU is a 30V NPN Bipolar (BJT) Single Transistor, designed for low noise, high gain and general purpose amplifier applications at collector currents from 1µA to 50mA. This product is general usage and suitable for many different applications.
- 35V Collector to base voltage (VCBO)
- 4.5V Emitter to base voltage (VEBO)
- 83.3°C/W Thermal resistance, junction to case
- 200°C/W Thermal resistance, junction to ambient
Applications
Industrial
Product Information
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- NPN
- :
- 30V
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- 30V
- :
- 50MHz
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- 100mA
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- 625mW
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- 625mW
- :
- 100mA
- :
- 300hFE
- :
- Through Hole
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- TO-92
- :
- 3Pins
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- 300hFE
- :
- 150°C
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- -
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- -
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- MSL 1 - Unlimited
Technical Documents (2)
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