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DMN61D8LVTQ-7
MOSFET, DUAL, N-CH, 60V, 0.63A ROHS COMPLIANT: YES
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24 In Stock
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Delivery in 2-4 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.692 |
| 10+ | $0.446 |
| 25+ | $0.399 |
| 50+ | $0.351 |
| 100+ | $0.304 |
| 250+ | $0.273 |
| 500+ | $0.242 |
| 1000+ | $0.223 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.46
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN61D8LVTQ-7
Newark Part No.28AK8630
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id630mA
Continuous Drain Current Id N Channel630mA
Continuous Drain Current Id P Channel630mA
Drain Source On State Resistance N Channel1.8ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel1.09W
Power Dissipation P Channel1.09W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
630mA
Continuous Drain Current Id P Channel
630mA
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
1.09W
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
630mA
Drain Source On State Resistance N Channel
1.8ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
1.09W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability