Low

FDS8928A - 

Dual MOSFET, N and P Channel, 5.5 A, 30 V, 0.025 ohm, 4.5 V, 670 mV

ON SEMICONDUCTOR/FAIRCHILD FDS8928A

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Manufacturer Part No:
FDS8928A
Newark Part No.:
38C7181
Technical Datasheet:
(EN)
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Product Overview

The FDS8928A is a dual N/P-channel enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. The device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
  • High density cell design for extremely low RDS (ON)
  • High power and current handling capability in a widely used surface-mount package

Applications

Industrial, Power Management, Computers & Computer Peripherals

Product Information

:
N and P Channel
:
5.5A
:
30V
:
0.025ohm
:
4.5V
:
670mV
:
2W
:
SOIC
:
8Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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INFINEON

Dual MOSFET, N and P Channel, 6.5 A, 30 V, 29 mohm, 10 V, 1 V

995 in stock
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US continental orders over $49 and under 50 pounds may qualify for free ground shipping. Click the link for the full Terms and Conditions of the offer.

Awaiting Delivery

Available for backorder to lead times shown

 
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More stock available week commencing 10/9/17

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Alternatives Available

19K8249 - Dual MOSFET, N and P Channel, 6.5 A, 30 V, 29 mohm, 10 V, 1 V

40M7945 - Dual MOSFET, N and P Channel, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V

94T3503 - MOSFET Transistor, N and P Channel, 8 A, 30 V, 0.018 ohm, 10 V, 1.6 V

$1.19 $ 1.19
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Each (Supplied on Cut Tape)
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Quantity Price
1 + $1.19
10 + $1.02
25 + $0.939
50 + $0.857
100 + $0.776
250 + $0.731
500 + $0.686
1000 + $0.542
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