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VISHAY  SIA456DJ-T1-GE3  MOSFET Transistor, N Channel, 2.6 A, 200 V, 3.5 ohm, 16 V, 1.4 V

VISHAY SIA456DJ-T1-GE3
Manufacturer:
VISHAY VISHAY
Manufacturer Part No:
SIA456DJ-T1-GE3
Newark Part No.:
03P9742
Technical Datasheet:
See all Technical Docs

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Product Overview

The SIA456DJ-T1-GE3 is a 200VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for boost converter applications.
  • New thermally enhanced PowerPAK® package
  • Small footprint area
  • Low ON-resistance
  • Halogen-free
  • -55 to 150°C Operating temperature range

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2.6A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
3.5ohm
Rds(on) Test Voltage Vgs:
16V
Threshold Voltage Vgs:
1.4V
Power Dissipation Pd:
3.5W
Transistor Case Style:
SC-70
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management;
  • Portable Devices

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 2.6 A, 200 V, 3.5 ohm, 16 V, 1.4 V

VISHAY

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