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VISHAY  SI7617DN-T1-GE3  MOSFET Transistor, P Channel, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V

VISHAY SI7617DN-T1-GE3
Technical Data Sheet (610.85KB) EN See all Technical Docs

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Product Overview

The SI7617DN-T1-GE3 is a -30V P-channel TrenchFET® Power MOSFET. Suitable for use in notebook battery charging and adapter switch applications. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
  • Halogen-free according to IEC 61249-2-21 definition
  • 100% Rg Tested
  • 100% UIS Tested

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-35A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.0103ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-2.5V
Power Dissipation Pd:
3.7W
Transistor Case Style:
PowerPAK 1212
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Computers & Computer Peripherals

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, P Channel, -35 A, -35 V, 0.0103 ohm, -10 V, -2.5 V

VISHAY

12,000 in stock

Price for: Each (Supplied on Full Reel)

3000+ $0.375 6000+ $0.357 12000+ $0.317

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