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VISHAY  SI7123DN-T1-GE3  MOSFET Transistor, P Channel, -25 A, -20 V, 18.9 mohm, 8 V, -1 V

VISHAY SI7123DN-T1-GE3
Technical Data Sheet (563.75KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-25A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.0189ohm
Rds(on) Test Voltage Vgs:
8V
Threshold Voltage Vgs:
-1V
Power Dissipation Pd:
3.7W
Transistor Case Style:
PowerPAK 1212
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-50 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Y-Ex

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