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VISHAY  SI4447DY-T1-E3  MOSFET Transistor, P Channel, -4.5 A, -40 V, 72 mohm, 16 V, -2.2 V

VISHAY SI4447DY-T1-E3
Technical Data Sheet (103.12KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-4.5A
Drain Source Voltage Vds:
-40V
On Resistance Rds(on):
0.072ohm
Rds(on) Test Voltage Vgs:
16V
Threshold Voltage Vgs:
-2.2V
Power Dissipation Pd:
1.1W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Y-Ex

Substitutes

MOSFET, P CH, W/D, 40V, 7.2A, SO8

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