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VISHAY  SI3456DDV-T1-GE3  MOSFET Transistor, N Channel, 6.3 A, 30 V, 33 mohm, 10 V, 1.2 V

VISHAY SI3456DDV-T1-GE3
Technical Data Sheet (193.17KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6.3A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.033ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.2V
Power Dissipation Pd:
1.7W
Transistor Case Style:
TSOP
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

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