Low

VISHAY  SI3456DDV-T1-GE3  MOSFET Transistor, N Channel, 6.3 A, 30 V, 33 mohm, 10 V, 1.2 V

VISHAY SI3456DDV-T1-GE3
Technical Data Sheet (193.17KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications.
  • Halogen-free
  • -55 to 150°C Operating temperature range

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6.3A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.033ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.2V
Power Dissipation Pd:
1.7W
Transistor Case Style:
TSOP
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 6.3 A, 30 V, 33 mohm, 10 V, 1.2 V

VISHAY

0

Price for: Each (Supplied on Full Reel)

3000+ $0.103 6000+ $0.098 12000+ $0.087

Buy

MOSFET,N CH,30V,6.3A,TSOP6

VISHAY

3,203:  in stock

Price for: Each (Supplied on Cut Tape)

1+ $0.645 50+ $0.497 100+ $0.363 500+ $0.288 More pricing

Buy

Associated Products