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SI1029X-T1-GE3 - 

Dual MOSFET, N and P Channel, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V

VISHAY SI1029X-T1-GE3

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Manufacturer:
VISHAY VISHAY
Manufacturer Part No:
SI1029X-T1-GE3
Newark Part No.:
16P3679
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
250mW
:
2.5V
:
-
:
150°C
:
305mA
:
6Pins
:
10V
:
N and P Channel
:
-
:
SC-89
:
1.4ohm
:
60V
:
MSL 1 - Unlimited
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Product Overview

The SI1029X-T1-GE3 is a N/P-channel complementary MOSFET designed for use with replace digital transistor, level-shifter, battery operated systems and power supply converter circuits applications. It offers ease in driving switches, low offset (error) voltage, low-voltage operation and high-speed circuits.
  • Halogen-free
  • TrenchFET® power MOSFET
  • Very small footprint
  • High-side switching
  • Low ON-resistance
  • ±2V Low threshold
  • 15ns Fast switching speed

Applications

Industrial, Power Management

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