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VISHAY  IRF840APBF  MOSFET Transistor, N Channel, 8 A, 500 V, 850 mohm, 10 V, 4 V

VISHAY IRF840APBF
Technical Data Sheet (277.19KB) EN See all Technical Docs

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Product Overview

The IRF840APBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge.
  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and Avalanche voltage and current
  • Effective COSS specified
  • Simple drive requirements

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
8A
Drain Source Voltage Vds:
500V
On Resistance Rds(on):
0.85ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
125W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products