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VISHAY  2N6660-E3  MOSFET Transistor, N Channel, 1.1 A, 60 V, 1.3 ohm, 10 V, 1.7 V

VISHAY 2N6660-E3
Technical Data Sheet (113.24KB) EN See all Technical Docs

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Product Overview

The 2N6660-E3 is a 60VDS N-channel enhancement-mode MOSFET offers low Input and output leakage.
  • 1.3Ω Low ON-resistance
  • 1.7V Low threshold
  • 35pF Low input capacitance
  • 8ns Fast switching speed
  • Guaranteed reliability
  • Low offset voltage
  • Low-voltage operation
  • Easily driven without buffer
  • High-speed circuits
  • Low error voltage

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.1A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
1.3ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.7V
Power Dissipation Pd:
6.25W
Transistor Case Style:
TO-205AD
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Portable Devices;
  • Defence, Military & Aerospace;
  • Lighting;
  • Imaging, Video & Vision;
  • Signal Processing;
  • Communications & Networking;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 1.1 A, 60 V, 3 ohm, 10 V, 1.7 V

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