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VISHAY  TSTS7100  Infrared Emitter, Hermetically Sealed, 5 °, TO-18, 100 mA, 1.3 V, 800 ns

VISHAY TSTS7100
Technical Data Sheet (134.98KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The TSTS7100 is a 950nm Infrared Emitting Diode in GaAs technology with lens. It is suitable for high pulse current operation and good spectral matching with Si photo-detectors.
  • High reliability
  • High radiant power
  • High radiant intensity
  • Low forward voltage
  • ±5° Angle of half intensity

 

Product Information

Viewing Angle:
Diode Case Style:
TO-18
Forward Current If(AV):
100mA
Forward Voltage VF Max:
1.3V
Rise Time:
800ns
Fall Time tf:
-
Operating Temperature Min:
-
Operating Temperature Max:
-
Packaging:
Each
Product Range:
-
Peak Wavelength:
950 nm
No. of Pins:
2
Radiant Intensity:
50 mW/Sr
MSL:
-
Supply Voltage Range:
1.3V
SVHC:
To Be Advised

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Applications

  • Sensing & Instrumentation;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Substitutes

Associated Products

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