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VISHAY  TSTS7100  Infrared Emitter, Hermetically Sealed, 5 °, TO-18, 100 mA, 1.3 V, 800 ns

VISHAY TSTS7100

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Product Overview

The TSTS7100 is a 950nm Infrared Emitting Diode in GaAs technology with lens. It is suitable for high pulse current operation and good spectral matching with Si photo-detectors.
  • High reliability
  • High radiant power
  • High radiant intensity
  • Low forward voltage
  • ±5° Angle of half intensity

Applications

Sensing & Instrumentation; Communications & Networking

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Product Information

Viewing Angle:
Diode Case Style:
TO-18
Forward Current If(AV):
100mA
Forward Voltage VF Max:
1.3V
Rise Time:
800ns
Fall Time tf:
-
Operating Temperature Min:
-
Operating Temperature Max:
-
Packaging:
Each
Product Range:
-
Peak Wavelength:
950 nm
No. of Pins:
2
Radiant Intensity:
50 mW/Sr
MSL:
-
Supply Voltage Range:
1.3V
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • Sensing & Instrumentation;
  • Communications & Networking

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