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VISHAY  TSHG6200  Infrared Emitter, High Speed, 10 °, T-1 3/4 (5mm), 100 mA, 1.5 V, 20 ns, 13 ns

VISHAY TSHG6200
Technical Data Sheet (102.45KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The TSHG6200 is a 850nm Infrared Emitting Diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, moulded in a clear. It is suitable for high pulse current operation and good spectral matching with CMOS cameras.
  • High reliability
  • High radiant power
  • High radiant intensity
  • Low forward voltage
  • ±10° Angle of half intensity

 

Product Information

Viewing Angle:
10°
Diode Case Style:
T-1 3/4 (5mm)
Forward Current If(AV):
100mA
Forward Voltage VF Max:
1.5V
Rise Time:
20ns
Fall Time tf:
13ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
85°C
Packaging:
Each
Product Range:
-
Peak Wavelength:
850 nm
No. of Pins:
2
Radiant Intensity:
180 mW/Sr
MSL:
-
Supply Voltage Range:
1.5V
SVHC:
To Be Advised

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Applications

  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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