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VISHAY  TSHG6200  Infrared Emitter, High Speed, 10 °, T-1 3/4 (5mm), 100 mA, 1.5 V, 20 ns, 13 ns

VISHAY TSHG6200
Technical Data Sheet (102.45KB) EN See all Technical Docs

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Product Overview

The TSHG6200 is a 850nm Infrared Emitting Diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, moulded in a clear. It is suitable for high pulse current operation and good spectral matching with CMOS cameras.
  • High reliability
  • High radiant power
  • High radiant intensity
  • Low forward voltage
  • ±10° Angle of half intensity

 

Product Information

Viewing Angle:
10°
Diode Case Style:
T-1 3/4 (5mm)
Forward Current If(AV):
100mA
Forward Voltage VF Max:
1.5V
Rise Time:
20ns
Fall Time tf:
13ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
85°C
Packaging:
Each
Product Range:
-
Automotive Qualifications Standard:
-
Peak Wavelength:
850 nm
No. of Pins:
2
Radiant Intensity:
180 mW/Sr
MSL:
-
Supply Voltage Range:
1.5V
SVHC:
To Be Advised

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Applications

  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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