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VISHAY  TSHF5210  Infrared Emitter, High Speed, 10 °, T-1 3/4 (5mm), 100 mA, 1.4 V, 30 ns, 30 ns

VISHAY TSHF5210
Technical Data Sheet (100.92KB) EN See all Technical Docs

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Product Overview

The TSHF5210 is a 890nm Infrared Emitting Diode in GaAlAs double hetero (DH) technology. It is moulded in a clear, untinted plastic package. It is suitable for infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
  • High speed
  • High reliability
  • High radiant power
  • High radiant intensity
  • ϕ = ±10° Angle of half intensity
  • Low forward voltage
  • Suitable for high pulse current operation
  • Good spectral matching with Si photodetectors
  • 12MHz High modulation bandwidth (fc)

 

Product Information

Viewing Angle:
10°
Diode Case Style:
T-1 3/4 (5mm)
Forward Current If(AV):
100mA
Forward Voltage VF Max:
1.4V
Rise Time:
30ns
Fall Time tf:
30ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
85°C
Packaging:
Each
Product Range:
-
Automotive Qualifications Standard:
-
Peak Wavelength:
890 nm
No. of Pins:
2
Radiant Intensity:
180 mW/Sr
MSL:
-
Supply Voltage Range:
1.4V
SVHC:
To Be Advised

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Applications

  • Consumer Electronics;
  • Industrial;
  • Safety;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products

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