Low

VISHAY  FB180SA10P  Bipolar (BJT) Single Transistor, N Channel, 180 A, 100 V, 6.5 mohm, 10 V, 4 V

VISHAY FB180SA10P

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Product Overview

The FB180SA10P is a 5th generation high current density Power MOSFET is parallel into a compact, high power module providing the best combination of switching, ruggedized design, very low on resistance and cost effectiveness.
  • Fully isolated package
  • Dynamic dv/dt rating
  • Fully avalanche rated
  • Simple drive requirements
  • Low drain to case capacitance
  • Low internal inductance

Applications

Industrial; Commercial

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
180A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.0065ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
480W
Operating Temperature Max:
150°C
Operating Temperature Min:
-55 °C
Product Range:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Commercial

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