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TOSHIBA  2SK3878(F)  Power MOSFET, N Channel, 9 A, 900 V, 1.3 ohm, 10 V, 4 V

TOSHIBA 2SK3878(F)
Technical Data Sheet (210.53KB) EN See all Technical Docs

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Product Overview

The 2SK3878(F) is a 900V N-channel silicon Field Effect Transistor designed for switching regulator applications.
  • Low drain-source ON resistance
  • High forward transfer admittance
  • Low leakage current
  • Enhancement mode
  • 900V Drain to gate voltage
  • ±30V Gate to source voltage
  • 0.833°C/W Thermal resistance, junction to case
  • 50°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
9A
Drain Source Voltage Vds:
900V
On Resistance Rds(on):
1.3ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-3P
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes