TOSHIBA  2SK3878(F)  Power MOSFET, N Channel, 9 A, 900 V, 1.3 ohm, 10 V, 4 V


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  • Manufacturer:
  • Newark Part No.: 15R2833
  • Manufacturer Part No 2SK3878(F)

Product Overview

The 2SK3878(F) is a 900V N-channel silicon Field Effect Transistor designed for switching regulator applications.
  • Low drain-source ON resistance
  • High forward transfer admittance
  • Low leakage current
  • Enhancement mode
  • 900V Drain to gate voltage
  • ±30V Gate to source voltage
  • 0.833°C/W Thermal resistance, junction to case
  • 50°C/W Thermal resistance, junction to ambient


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Product Information

  • Transistor Polarity N Channel
  • Continuous Drain Current Id 9A
  • Drain Source Voltage Vds 900V
  • On Resistance Rds(on) 1.3ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 4V
  • Power Dissipation Pd 150W
  • Transistor Case Style TO-3P
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • MSL -
  • SVHC To Be Advised

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Availability:  386

  • 386 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 9/12/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $3.27 $3.27



Quantity List Price
1 - 99 $3.27
100 - 249 $2.96
250 - 499 $2.71
500 - 999 $2.51
1000+ $2.35

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