Low

2SK3878(F) - 

Power MOSFET, N Channel, 9 A, 900 V, 1.3 ohm, 10 V, 4 V

TOSHIBA 2SK3878(F)

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Manufacturer:
TOSHIBA TOSHIBA
Manufacturer Part No:
2SK3878(F)
Newark Part No.:
15R2833
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The 2SK3878(F) is a 900V N-channel silicon Field Effect Transistor designed for switching regulator applications.
  • Low drain-source ON resistance
  • High forward transfer admittance
  • Low leakage current
  • Enhancement mode
  • 900V Drain to gate voltage
  • ±30V Gate to source voltage
  • 0.833°C/W Thermal resistance, junction to case
  • 50°C/W Thermal resistance, junction to ambient

Applications

Industrial

Product Information

:
N Channel
:
9A
:
900V
:
1.3ohm
:
10V
:
4V
:
150W
:
TO-3P
:
3Pins
:
150°C
:
-
:
-
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