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TPS5430DDA - 

DC-DC Switching Step Down Regulator, Adjustable, 5.5V-36Vin, 1.22V-31Vout, 3Aout, SOIC-8

TEXAS INSTRUMENTS TPS5430DDA

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Manufacturer Part No:
TPS5430DDA
Newark Part No.:
75K1619
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
3A
:
1.22V
:
-
:
Each
:
1Outputs
:
36V
:
SOIC
:
125°C
:
Buck (Step Down)
:
500kHz
:
8Pins
:
31V
:
5.5V
:
-
:
MSL 1 - Unlimited
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Product Overview

The TPS5430DDA is a 3A 500kHz Step-down Converter with Eco-mode™ that integrates a low-resistance, high-side N-channel MOSFET. Included on the substrate with the listed features are a high-performance voltage error amplifier that provides tight voltage regulation accuracy under transient conditions, an under-voltage-lockout circuit to prevent start-up until the input voltage reaches 5.5V, an internally set slow-start circuit to limit inrush currents and a voltage feed-forward circuit to improve the transient response. Using the ENA pin, shutdown supply current is reduced to 18µA typically. Other features include an active-high enable, over-current limiting, over-voltage protection and thermal shutdown. To reduce design complexity and external component count, the TPS5430 feedback loop is internally compensated. The TPS5430 regulates a wide variety of power sources including 24V bus.
  • Up to 3A continuous (4A peak) output current
  • High efficiency up to 95% enabled by 110mΩ integrated MOSFET switch
  • Wide output voltage range (adjustable down to 1.22V with 1.5% initial accuracy)
  • Internal compensation minimizes external parts count
  • Improved line regulation and transient response by input voltage feed-forward
  • System protected by over-current limiting, overvoltage protection and thermal shutdown
  • Green product and no Sb/Br

Applications

Consumer Electronics, Multimedia, Industrial, Audio, Automotive, Power Management

Warnings

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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