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TAS5760XXEVM - 

Evaluation Board, Stereo Amplifier - Class D, TAS5760

TEXAS INSTRUMENTS TAS5760XXEVM
TEXAS INSTRUMENTS TAS5760XXEVM

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Manufacturer Part No:
TAS5760XXEVM
Newark Part No.:
97W0898
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
TAS5760
:
Eval Board TAS5760
:
Audio Power Amplifier - Class D
:
-
:
Texas Instruments
:
Amplifier
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Product Overview

The TAS5760XXEVM is an evaluation module for TAS5760xx closed loop I2S input amplifiers. The TAS5760 is a single die I2S input class D stereo amplifier with integrated headphone amplifier. The evaluation module is populated with a TAS5760MDDCA device which allows operation from power supply voltages from 4.5V to 26.4V and includes an integrated head phone amplifier/2Vrms line driver. The TAS5760xxEVM can be operated in both stereo BTL mode as well as mono PBTL mode. When combined with a PurePath console mother board and PurePath console GUI we have a complete audio evaluation system at our fingertips that allows audio inputs from a variety of sources to the TAS5760xxEVM and a GUI to control the device and supporting circuitry. The GUI can also be used to emulate the hardware control mode of the TAS5760xx device. The GUI is required to operate the TAS5760xxEVM, regardless of whether hardware control mode or software control mode is used.
  • GUI control via PurePath console (PurePathConsole)
  • PurePath console mother board (PurePath-CMBEVM) provides flexible input signal routing
  • Operation in hardware or software (I2C) mode
  • Stereo channels with I2S input
  • Supports up to 96KHz sample rates
  • Built in digital and soft clippers to set the output power level of the end equipment
  • Operates in BTL or PBTL configurations
  • Option for integrated headphone/2Vrms line driver
  • Headphones input and output
  • Operates in BTL or PBTL configurations

Applications

Consumer Electronics, Audio

Footnotes

The TAS5760xxEVM is not compatible with the TAS5760xxDAP devices.

Warnings

This device has limited built in ESD protection. The leads should be shorted together or device placed in conductive foam during storage or handling to prevent electrostatic damage to MOS gates.

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