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SN65HVD3082ED - 

Transceiver RS485, 4.5V-5.5V supply, SOIC-8

TEXAS INSTRUMENTS SN65HVD3082ED

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Manufacturer Part No:
SN65HVD3082ED
Newark Part No.:
61H5396
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
-40°C
:
-
:
Each
:
1
:
85°C
:
SOIC
:
RS485
:
8Pins
:
1Drivers
:
4.5V
:
-
:
5.5V
:
RS485 Transceiver
:
MSL 1 - Unlimited
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Product Overview

The SN65HVD3082ED is a low power half duplex RS485 transceiver in 8 pin SOIC package. It is powered by 5V supply and fully compliant with TIA/EIA-485A standard. This device is suitable for transmitting data over long twisted pair cables with controlled transition times. The SN65HVD3082E is optimized for signalling rates up to 200Kbps. It is designed to operate with very low supply current of typically 0.3mA exclusive of load. In inactive shutdown mode, the supply current drops to a few nanoamps making the SN65HVD3082E ideal for power sensitive applications. The wide common mode range and high ESD protection levels of this device make them suitable for demanding applications such as energy meter networks, electrical inverters, status/command signals across telecom racks and cabled chassis interconnects where noise tolerance is essential. Power on reset circuits keep outputs in high impedance state until supply voltage has stabilized.
  • Low quiescent power of 0.3mA in active mode and 1nA in shutdown mode
  • 1/8 unit load up to 256 nodes on bus
  • Supply voltage range from 4.5V to 5.5V
  • Bus pin ESD protection up to 15KV
  • Industry standard SN75176 footprint
  • Thermal shutdown function protects device from damage due to system fault conditions
  • Failsafe receiver (bus open, bus shorted, bus idle)
  • Glitch free power up/down bus inputs and outputs
  • Operating temperature range from -40°C to 85°C

Applications

Communications & Networking, Metering, Motor Drive & Control, Industrial, Automation & Process Control, Power Management, Building Automation

Warnings

This device has limited built-in ESD protection. The leads should be shorted together or device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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