Low

LM358N/NOPB - 

Operational Amplifier, Dual, 2 Amplifier, 1 MHz, 0.1 V/µs, 3V to 32V, DIP, 8 Pins

TEXAS INSTRUMENTS LM358N/NOPB

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Manufacturer Part No:
LM358N/NOPB
Newark Part No.:
41K4891
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
3V to 32V
:
0°C
:
-
:
Each
:
0.1V/µs
:
70°C
:
8Pins
:
DIP
:
2 Amplifier
:
-
:
1MHz
:
MSL 1 - Unlimited
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Product Overview

The LM358N/NOPB is a two independent, high gain, internally frequency compensated Operational Amplifier IC, designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. The LM358N/NOPB can be directly operated off of the standard 3.3V power supply voltage which is used in digital systems and will easily provide the required interface electronics without requiring the additional ±15V power supplies.
  • Internally Frequency Compensated for Unity Gain
  • 100dB Large DC Voltage Gain
  • 1MHz (Temperature Compensated) Wide Bandwidth (Unity Gain)
  • Very Low Supply Current Drain (500µA), Essentially Independent of Supply Voltage
  • 2mV Low Input Offset Voltage
  • Input voltage range includes ground differential i/p voltage range equal to the power supply voltage
  • Large Output Voltage Swing
  • In the Linear Mode Input Common-Mode Voltage Range
  • Includes ground & output voltage can also swing to ground, operated with single power supply voltage
  • Unity Gain Cross Frequency is Temperature Compensated
  • Input Bias Current is also Temperature Compensated
  • Two Internally Compensated Op Amps
  • Eliminates Need for Dual Supplies
  • Allows Direct Sensing Near GND and VOUT Also Goes to GND
  • Compatible with All Forms of Logic
  • Power Drain Suitable for Battery Operation
  • Green Product, No Sb/Br

Applications

Power Management, Signal Processing

Warnings

Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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