Low

LF398N/NOPB - 

Sample and Hold Amplifier, 1 Amplifier, 1 MHz, 20 µs, 2 mV, DIP, 8 Pins

TEXAS INSTRUMENTS LF398N/NOPB

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Manufacturer Part No:
LF398N/NOPB
Newark Part No.:
41K2551
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
± 5V to ± 18V
:
20µs
:
0°C
:
Each
:
70°C
:
8Pins
:
DIP
:
1 Amplifier
:
2mV
:
-
:
-
:
1MHz
:
MSL 1 - Unlimited
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Product Overview

The LF398N/NOPB is a monolithic Sample-and-Hold Circuit uses BI-FET technology to obtain ultrahigh DC accuracy with fast acquisition of signal and low droop rate. Operating as unity-gain follower, DC gain accuracy is 0.002% typical and acquisition time is as low as 6µs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is accomplished with a single pin and does not degrade input offset drift. The wide bandwidth allows the LF198-N to be included inside the feedback loop of 1MHz operational amplifiers without having stability problems. Input impedance of 10¹⁰Ω allows high-source impedances to be used without degrading accuracy. P-channel junction FETs are combined with bipolar devices in the output amplifier to give droop rates as low as 5mV/minute with a 1µF hold capacitor. The JFETs have much lower noise than MOS devices used in previous designs and do not exhibit high temperature instabilities.
  • Low input offset
  • Low output noise in hold mode
  • Input characteristics do not change during hold mode
  • High supply rejection ratio in sample or hold
  • Wide bandwidth
  • Logic input compatible with TTL, PMOS and CMOS
  • 0.5mV Typical hold step at 0.01µF
  • 0.002% Gain accuracy
  • 500mW Power dissipation
  • ±15V Supply voltage

Applications

Industrial

Warnings

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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