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STMICROELECTRONICS  STGW30NC60WD  IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

STMICROELECTRONICS STGW30NC60WD
Technical Data Sheet (540.66KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The STGW30NC60WD is a 600V Ultra Fast IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in HF, SMPS and PFC in both hard switch and resonant topologies. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
  • High frequency operation
  • Lower CRES/CIES ratio (no cross-conduction susceptibility)
  • Very soft ultra fast recovery anti-parallel diode
  • Low VCE (sat) for reduced conduction losses
  • Tight parameter distribution for design simplification and easy paralleling

 

Product Information

DC Collector Current:
60A
Collector Emitter Saturation Voltage Vce(on):
2.5V
Power Dissipation Pd:
200W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Motor Drive & Control;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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