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STMICROELECTRONICS  STGW20NC60VD  IGBT Single Transistor, 60 A, 1.7 V, 200 W, 600 V, TO-247, 3 Pins

STMICROELECTRONICS STGW20NC60VD
Technical Data Sheet (339.97KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The STGW20NC60VD is a 600V very fast IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. It is suitable for use with high frequency inverters, UPS, motor drive, SMPS and PFC in both hard switch and resonant topologies.
  • High current capability
  • High frequency operation up to 50KHz
  • Very soft ultra fast recovery anti-parallel diode
  • ±20V Gate to emitter voltage
  • 0.63°C/W IGBT thermal resistance, junction to case
  • 1.5°C/W IGBT thermal resistance, junction to case
  • 50°C/W Thermal resistance, junction to ambient

 

Product Information

DC Collector Current:
60A
Collector Emitter Saturation Voltage Vce(on):
1.7V
Power Dissipation Pd:
200W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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