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STMICROELECTRONICS  2N2222A  Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 500 mW, 600 mA, 300 hFE

STMICROELECTRONICS 2N2222A
Technical Data Sheet (166.49KB) EN See all Technical Docs

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Product Overview

The 2N2222A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-18 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
  • Collector to emitter voltage (Vce) is 40V
  • Collector current (Ic) is 0.6A
  • Power dissipation (Pd) is 1.8W
  • Collector to emitter saturation voltage of 1V at 500mA collector current
  • DC current gain (hFE) of 35 at 0.1mA collector current
  • Operating junction temperature range from 175°C

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
500mW
DC Collector Current:
600mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
TO-18
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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