2N2222A - 

Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 500 mW, 600 mA, 300 hFE

2N2222A - Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 500 mW, 600 mA, 300 hFE

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Product Overview

The 2N2222A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-18 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
  • Collector to emitter voltage (Vce) is 40V
  • Collector current (Ic) is 0.6A
  • Power dissipation (Pd) is 1.8W
  • Collector to emitter saturation voltage of 1V at 500mA collector current
  • DC current gain (hFE) of 35 at 0.1mA collector current
  • Operating junction temperature range from 175°C


Power Management, Consumer Electronics, Portable Devices, Industrial

Product Information

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No Longer Manufactured

Alternatives Available

35X2683 - Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 1.2 W, 800 mA, 30

67R1059 - Silicon Transistor NPN / BULK

87K2254 - Bipolar (BJT) Single Transistor, NPN, 30 V, 500 mW, 800 mA, 100

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