Low

STMICROELECTRONICS  2N2222A  Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 500 mW, 600 mA, 300 hFE

STMICROELECTRONICS 2N2222A
Technical Data Sheet (166.49KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The 2N2222A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-18 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
  • Collector to emitter voltage (Vce) is 40V
  • Collector current (Ic) is 0.6A
  • Power dissipation (Pd) is 1.8W
  • Collector to emitter saturation voltage of 1V at 500mA collector current
  • DC current gain (hFE) of 35 at 0.1mA collector current
  • Operating junction temperature range from 175°C

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
500mW
DC Collector Current:
600mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
TO-18
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes