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S29GL256P11FFI010 - 

Flash Memory, NOR, 256 Mbit, 32M x 8bit / 16M x 16bit, Parallel, FBGA, 64 Pins

CYPRESS SEMICONDUCTOR S29GL256P11FFI010

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Manufacturer Part No:
S29GL256P11FFI010
Newark Part No.:
34M8728
Product Range
3V Parallel NOR Flash Memories
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
256Mbit
:
-40°C
:
Each
:
85°C
:
Parallel
:
110ns
:
-
:
64Pins
:
FBGA
:
2.7V
:
3V Parallel NOR Flash Memories
:
3.6V
:
32M x 8bit / 16M x 16bit
:
MSL 3 - 168 hours
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Product Overview

The S29GL256P11FFI010 is a 256MB page mode Flash Memory fabricated on 90nm MirrorBit® Process technology. This device offers a fast page access time of 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
  • Highest address sector protected
  • Versatile I/O™ control
  • Secured silicon sector region - Can be programmed and locked at the factory or by the customer
  • 100000 Erase cycles per sector typical
  • 20 Years data retention typical
  • Suspend and resume commands for program and erase operations
  • Write operation status bits indicate program and erase operation completion
  • Unlock bypass program command - Reduces programming time
  • Support for CFI
  • Persistent and password methods of advanced sector protection
  • WP#/ACC input - Protects first or last sector regardless of sector protection settings
  • Accelerates programming time for greater throughput during system production
  • Hardware reset input resets device
  • Ready/busy# output detects program or erase cycle completion

Applications

Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics

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