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PMD17K100 - 

Bipolar (BJT) Single Transistor, PNP, -100 V, 225 W, -20 A, 800 hFE

SOLID STATE PMD17K100

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Manufacturer Part No:
PMD17K100
Newark Part No.:
07R8808
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
225W
:
-
:
-100V
:
-
:
200°C
:
3Pins
:
PNP
:
800hFE
:
-
:
-20A
:
TO-3
:
-
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Product Overview

The PMD17K100 is a PNP power Darlington Transistor features monolithic epitaxial base structures with built-in base to emitter shunt resistors. It is CVD glass passivated to increase reliability and provide reduced high-temperature reverse leakage current. This important feature enables this device to meet guaranteed operating junction temperatures of 200°C. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during overshoot.
  • Guaranteed and 100% tested for ISB insuring maximum performance at high energy levels
  • Low thermal resistance for more use-able power and lower operating temperatures
  • Hermetically sealed

Applications

Industrial, Power Management

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