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SOLID STATE  PMD17K100  Bipolar (BJT) Single Transistor, PNP, -100 V, 225 W, -20 A, 800 hFE

SOLID STATE PMD17K100
Technical Data Sheet (384.66KB) EN See all Technical Docs

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Product Overview

The PMD17K100 is a PNP power Darlington Transistor features monolithic epitaxial base structures with built-in base to emitter shunt resistors. It is CVD glass passivated to increase reliability and provide reduced high-temperature reverse leakage current. This important feature enables this device to meet guaranteed operating junction temperatures of 200°C. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during overshoot.
  • Guaranteed and 100% tested for ISB insuring maximum performance at high energy levels
  • Low thermal resistance for more use-able power and lower operating temperatures
  • Hermetically sealed

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-100V
Transition Frequency ft:
-
Power Dissipation Pd:
225W
DC Collector Current:
-20A
DC Current Gain hFE:
800hFE
Transistor Case Style:
TO-3
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products