PMD17K100 - 

Bipolar (BJT) Single Transistor, PNP, -100 V, 225 W, -20 A, 800 hFE

PMD17K100 - Bipolar (BJT) Single Transistor, PNP, -100 V, 225 W, -20 A, 800 hFE

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Product Overview

The PMD17K100 is a PNP power Darlington Transistor features monolithic epitaxial base structures with built-in base to emitter shunt resistors. It is CVD glass passivated to increase reliability and provide reduced high-temperature reverse leakage current. This important feature enables this device to meet guaranteed operating junction temperatures of 200°C. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during overshoot.
  • Guaranteed and 100% tested for ISB insuring maximum performance at high energy levels
  • Low thermal resistance for more use-able power and lower operating temperatures
  • Hermetically sealed


Industrial, Power Management

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