SOLID STATE  PMD16K100  Bipolar (BJT) Single Transistor, NPN, 80 V, 225 W, 20 A, 1000


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  • Manufacturer:
  • Newark Part No.: 07R8806
  • Manufacturer Part No PMD16K100

Product Overview

The PMD16K100 is a 100V Silicon NPN Darlington Power Transistor having monolithic epitaxial base structures with built-in base to emitter shunt resistors. The transistor is CVD glass passivated to increase reliability and provide reduced high temperature reverse leakage current. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during negative overshoot.
  • Low thermal resistance for more useable power
  • Hermetically sealed


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Product Specifications, Documents & More

  • Collector Emitter Voltage V(br)ceo: 80V
  • DC Collector Current: 20A
  • DC Current Gain hFE: 1000
  • MSL: -
  • No. of Pins: 3
  • Operating Temperature Max: 200°C
  • Operating Temperature Min: -65°C
  • Power Dissipation Pd: 225W
  • SVHC: No SVHC (15-Jun-2015)
  • Transistor Case Style: TO-3
  • Transistor Polarity: NPN
  • Transition Frequency Typ ft: -


Availability:  71

  • 71 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 12/7/15

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $5.46 $5.46



Quantity List Price
1 - 9 $5.46
10 - 99 $4.94
100 - 249 $4.47
250 - 499 $4.00
500 - 999 $3.65
1000+ $3.16

Legislation and Environmental

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  Newark Part No. Manufacturer Part No Manufacturer / Description
Availability Price Qty
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Suggested Substitutes



Bipolar (BJT) Single Transistor, NPN, 80 V, 2 MHz, 200 W, 20 A, 40


Price for: Each 1

100+ $3.20 250+ $2.96 500+ $2.91 1000+ $2.55

    More stock available week commencing 12/21/15

Not Normally Stocked

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