SOLID STATE  PMD16K100  Bipolar (BJT) Single Transistor, NPN, 80 V, 225 W, 20 A, 1000


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  • Manufacturer:
  • Newark Part No.: 07R8806
  • Manufacturer Part No PMD16K100

Product Overview

The PMD16K100 is a 100V Silicon NPN Darlington Power Transistor having monolithic epitaxial base structures with built-in base to emitter shunt resistors. The transistor is CVD glass passivated to increase reliability and provide reduced high temperature reverse leakage current. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during negative overshoot.
  • Low thermal resistance for more useable power
  • Hermetically sealed


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Product Information

  • Transistor Polarity NPN
  • Collector Emitter Voltage V(br)ceo 80V
  • Transition Frequency ft -
  • Power Dissipation Pd 225W
  • DC Collector Current 20A
  • DC Current Gain hFE 1000
  • Transistor Case Style TO-3
  • No. of Pins 3Pins
  • Operating Temperature Max 200°C
  • MSL -
  • Operating Temperature Min -65 °C
  • SVHC No SVHC (15-Jun-2015)


Availability:  58

  • 58 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 5/16/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $5.46 $5.46



Quantity List Price
1 - 9 $5.46
10 - 99 $4.94
100 - 249 $4.47
250 - 499 $4.00
500 - 999 $3.65
1000+ $3.16

Legislation and Environmental

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Suggested Substitutes



Bipolar (BJT) Single Transistor, NPN, 80 V, 2 MHz, 200 W, 20 A, 40

Availability:​ 0

Price for: Each

100+ $3.20 250+ $2.96 500+ $2.91 1000+ $2.55 More pricing

    More stock available week commencing 5/30/16

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Non-Cancelable / Non Returnable

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