Low

PMD16K100 - 

Bipolar (BJT) Single Transistor, NPN, 80 V, 225 W, 20 A, 1000 hFE

SOLID STATE PMD16K100

The actual product may differ from image shown

Manufacturer Part No:
PMD16K100
Newark Part No.:
07R8806
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
225W
:
-
:
80V
:
-
:
200°C
:
3Pins
:
NPN
:
1000hFE
:
-
:
20A
:
TO-3
:
-
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The PMD16K100 is a 100V Silicon NPN Darlington Power Transistor having monolithic epitaxial base structures with built-in base to emitter shunt resistors. The transistor is CVD glass passivated to increase reliability and provide reduced high temperature reverse leakage current. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during negative overshoot.
  • Low thermal resistance for more useable power
  • Hermetically sealed

Applications

Industrial

Substitutes

Compare Selected
Manufacturer Part Number
Newark Part No.
Manufacturer / Description
Avail
Price For
Quantity

Associated Products

Compare Selected