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SOLID STATE  PMD16K100  Bipolar (BJT) Single Transistor, NPN, 80 V, 225 W, 20 A, 1000 hFE

SOLID STATE PMD16K100
Technical Data Sheet (384.66KB) EN See all Technical Docs

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Product Overview

The PMD16K100 is a 100V Silicon NPN Darlington Power Transistor having monolithic epitaxial base structures with built-in base to emitter shunt resistors. The transistor is CVD glass passivated to increase reliability and provide reduced high temperature reverse leakage current. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during negative overshoot.
  • Low thermal resistance for more useable power
  • Hermetically sealed

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
-
Power Dissipation Pd:
225W
DC Collector Current:
20A
DC Current Gain hFE:
1000hFE
Transistor Case Style:
TO-3
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products