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PMD16K100 - 

Bipolar (BJT) Single Transistor, NPN, 80 V, 225 W, 20 A, 1000 hFE

PMD16K100 - Bipolar (BJT) Single Transistor, NPN, 80 V, 225 W, 20 A, 1000 hFE

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Manufacturer Part No:
PMD16K100
Newark Part No.:
07R8806
Technical Datasheet:
(EN)
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Product Overview

The PMD16K100 is a 100V Silicon NPN Darlington Power Transistor having monolithic epitaxial base structures with built-in base to emitter shunt resistors. The transistor is CVD glass passivated to increase reliability and provide reduced high temperature reverse leakage current. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during negative overshoot.
  • Low thermal resistance for more useable power
  • Hermetically sealed

Applications

Industrial

Product Information

:
NPN
:
80V
:
-
:
225W
:
20A
:
1000hFE
:
TO-3
:
3Pins
:
200°C
:
-
:
-
:
-
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