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SOLID STATE  MJ2955  Bipolar (BJT) Single Transistor, PNP, -60 V, 2.5 MHz, 115 W, -15 A, 70 hFE

SOLID STATE MJ2955
Technical Data Sheet (263.20KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MJ2955 is a -60V PNP complementary silicon Power Transistor designed for use in general-purpose amplifier and switching applications.
  • 1.1V Maximum collector to emitter saturation voltage (VCE (sat))
  • -100V Collector to base voltage
  • -7V Emitter to base voltage
  • 7A Base current
  • 1.52°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-60V
Transition Frequency ft:
2.5MHz
Power Dissipation Pd:
115W
DC Collector Current:
-15A
DC Current Gain hFE:
70hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Substitutes

Associated Products

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