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SOLID STATE  MJ11012  Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 200 W, 30 A, 1000 hFE

SOLID STATE MJ11012
Technical Data Sheet (250.95KB) EN See all Technical Docs

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Product Overview

The MJ11012 is a silicon NPN power Darlington Transistor designed for use as output device in a complementary general purpose amplifier applications.
  • High gain Darlington performance
  • Monolithic construction with built-in base-emitter shunt resistors

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
-
Power Dissipation Pd:
200W
DC Collector Current:
30A
DC Current Gain hFE:
1000hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products