MJ10025 - 

Bipolar (BJT) Single Transistor, Darlington, NPN, 850 V, 250 W, 20 A, 50 hFE

MJ10025 - Bipolar (BJT) Single Transistor, Darlington, NPN, 850 V, 250 W, 20 A, 50 hFE

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Product Overview

The MJ10025 is a 850V NPN silicon power Darlington Transistor with base-emitter speedup diode. It is designed for high voltage, high speed power switching in inductive circuits where fall time is critical. The transistor is particularly suited for line operated switch-mode applications such as switching regulators, inverters, solenoid and relay drivers.
  • 8V Emitter to base voltage
  • 40A Peak collector current
  • 10A Base current
  • 0.7°C/W Thermal resistance, junction to case


Defence, Military & Aerospace

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50 Further stock expected to ship on May 6, 2018

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