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SOLID STATE  MJ10025  Bipolar (BJT) Single Transistor, Darlington, NPN, 850 V, 250 W, 20 A, 50 hFE

SOLID STATE MJ10025
Technical Data Sheet (323.16KB) EN See all Technical Docs

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Product Overview

The MJ10025 is a 850V NPN silicon power Darlington Transistor with base-emitter speedup diode. It is designed for high voltage, high speed power switching in inductive circuits where fall time is critical. The transistor is particularly suited for line operated switch-mode applications such as switching regulators, inverters, solenoid and relay drivers.
  • 8V Emitter to base voltage
  • 40A Peak collector current
  • 10A Base current
  • 0.7°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
850V
Transition Frequency ft:
-
Power Dissipation Pd:
250W
DC Collector Current:
20A
DC Current Gain hFE:
50hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Defence, Military & Aerospace

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products