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MJ10016 - 

Bipolar (BJT) Single Transistor, Darlington, NPN, 500 V, 250 W, 50 A, 25 hFE

SOLID STATE MJ10016

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Manufacturer Part No:
MJ10016
Newark Part No.:
10P1517
Technical Datasheet:
(EN)
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Product Information

:
250W
:
-
:
500V
:
-
:
200°C
:
2Pins
:
NPN
:
25hFE
:
-
:
50A
:
TO-3
:
-
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Product Overview

The MJ10016 is a Darlington NPN silicon Power Transistor with base emitter speedup diode. Designed for use in high voltage, high speed, power switching in inductive circuits where fall time is critical and suited for line operated switch mode applications.
  • 8V Emitter-base voltage
  • 10A Base current
  • 0.7°C/W Junction-to-case thermal resistance

Applications

Power Management, Motor Drive & Control

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