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SOLID STATE  MJ10016  Bipolar (BJT) Single Transistor, Darlington, NPN, 500 V, 250 W, 50 A, 25 hFE

SOLID STATE MJ10016
Manufacturer Part No:
MJ10016
Newark Part No.:
10P1517
Technical Datasheet:
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Product Overview

The MJ10016 is a Darlington NPN silicon Power Transistor with base emitter speedup diode. Designed for use in high voltage, high speed, power switching in inductive circuits where fall time is critical and suited for line operated switch mode applications.
  • 8V Emitter-base voltage
  • 10A Base current
  • 0.7°C/W Junction-to-case thermal resistance

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
500V
Transition Frequency ft:
-
Power Dissipation Pd:
250W
DC Collector Current:
50A
DC Current Gain hFE:
25hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (12-Jan-2017)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, NPN, 500 V, 250 W, 50 A, 25 hFE

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