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SOLID STATE  MJ10016  Bipolar (BJT) Single Transistor, Darlington, NPN, 500 V, 250 W, 50 A, 25 hFE

SOLID STATE MJ10016
Technical Data Sheet (300.71KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MJ10016 is a Darlington NPN silicon Power Transistor with base emitter speedup diode. Designed for use in high voltage, high speed, power switching in inductive circuits where fall time is critical and suited for line operated switch mode applications.
  • 8V Emitter-base voltage
  • 10A Base current
  • 0.7°C/W Junction-to-case thermal resistance

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
500V
Transition Frequency ft:
-
Power Dissipation Pd:
250W
DC Collector Current:
50A
DC Current Gain hFE:
25hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Substitutes

Bipolar (BJT) Single Transistor, NPN, 500 V, 250 W, 50 A, 25 hFE

NTE ELECTRONICS

315: 

Price for: Each

1+ $13.14 25+ $12.54 50+ $12.18 100+ $11.82 More pricing

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