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SOLID STATE  MJ10007  Bipolar (BJT) Single Transistor, Darlington, NPN, 400 V, 150 W, 10 A, 30 hFE

SOLID STATE MJ10007
Technical Data Sheet (351.10KB) EN See all Technical Docs

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Product Overview

The MJ10007 is a 400V NPN silicon power Darlington Transistor with base-emitter speedup diode. It is designed for high voltage, high speed power switching in inductive circuits where fall time is critical. The transistor is particularly suited for line operated switch-mode applications such as switching regulators, inverters, solenoid and relay drivers.
  • 8V Emitter to base voltage
  • 20A Peak collector current
  • 2.5A Base current
  • 1.17°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
400V
Transition Frequency ft:
-
Power Dissipation Pd:
150W
DC Collector Current:
10A
DC Current Gain hFE:
30hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products