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MJ10007 - 

Bipolar (BJT) Single Transistor, Darlington, NPN, 400 V, 150 W, 10 A, 30 hFE

SOLID STATE MJ10007

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Manufacturer Part No:
MJ10007
Newark Part No.:
10P1512
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
150W
:
-
:
400V
:
-
:
200°C
:
2Pins
:
NPN
:
30hFE
:
-
:
10A
:
TO-3
:
-
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Product Overview

The MJ10007 is a 400V NPN silicon power Darlington Transistor with base-emitter speedup diode. It is designed for high voltage, high speed power switching in inductive circuits where fall time is critical. The transistor is particularly suited for line operated switch-mode applications such as switching regulators, inverters, solenoid and relay drivers.
  • 8V Emitter to base voltage
  • 20A Peak collector current
  • 2.5A Base current
  • 1.17°C/W Thermal resistance, junction to case

Applications

Industrial, Power Management

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