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SOLID STATE  MJ10000  Bipolar (BJT) Single Transistor, Darlington, NPN, 450 V, 175 W, 20 A, 600 hFE

SOLID STATE MJ10000
Technical Data Sheet (334.66KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MJ10000 is a NPN silicon power Darlington Transistor with base emitter speedup diode. Designed for use in high voltage, high speed, power switching in inductive circuits where fall time is critical and suited for line operated switch mode applications.
  • 8V Emitter-base voltage
  • 2.5A Base current
  • 1°C/W Junction-to-case thermal resistance

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
450V
Transition Frequency ft:
-
Power Dissipation Pd:
175W
DC Collector Current:
20A
DC Current Gain hFE:
600hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Associated Products

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