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MJ10000 - 

Bipolar (BJT) Single Transistor, Darlington, NPN, 450 V, 175 W, 20 A, 600 hFE

SOLID STATE MJ10000

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Manufacturer Part No:
MJ10000
Newark Part No.:
10P1506
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
175W
:
-
:
450V
:
-
:
200°C
:
2Pins
:
NPN
:
600hFE
:
-
:
20A
:
TO-3
:
-
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Product Overview

The MJ10000 is a NPN silicon power Darlington Transistor with base emitter speedup diode. Designed for use in high voltage, high speed, power switching in inductive circuits where fall time is critical and suited for line operated switch mode applications.
  • 8V Emitter-base voltage
  • 2.5A Base current
  • 1°C/W Junction-to-case thermal resistance

Applications

Power Management, Motor Drive & Control

Associated Products