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SOLID STATE  2N3500  Bipolar (BJT) Single Transistor, NPN, 150 V, 150 MHz, 5 W, 300 mA, 120 hFE

SOLID STATE 2N3500
Technical Data Sheet (170.37KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N3500 is a 150V NPN silicon planar RF Transistor capable of 5W power dissipation and 300mA continuous collector current.
  • 150V Collector to base voltage
  • 6V Emitter to base voltage
  • 35°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
150V
Transition Frequency ft:
150MHz
Power Dissipation Pd:
5W
DC Collector Current:
300mA
DC Current Gain hFE:
120hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • RF Communications

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Associated Products

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