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2N3500 - 

Bipolar (BJT) Single Transistor, NPN, 150 V, 150 MHz, 5 W, 300 mA, 120 hFE

2N3500 - Bipolar (BJT) Single Transistor, NPN, 150 V, 150 MHz, 5 W, 300 mA, 120 hFE

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Manufacturer Part No:
2N3500
Newark Part No.:
67R1069
Technical Datasheet:
(EN)
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Product Overview

The 2N3500 is a 150V NPN silicon planar RF Transistor capable of 5W power dissipation and 300mA continuous collector current.
  • 150V Collector to base voltage
  • 6V Emitter to base voltage
  • 35°C/W Thermal resistance, junction to case

Applications

RF Communications

Product Information

:
NPN
:
150V
:
150MHz
:
5W
:
300mA
:
120hFE
:
TO-39
:
3Pins
:
200°C
:
-
:
-
:
-
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