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CYPRESS SEMICONDUCTOR  FM25H20-DG  NVRAM, FRAM, 2 Mbit, 256K x 8bit, Serial, SPI, TDFN

CYPRESS SEMICONDUCTOR FM25H20-DG
Manufacturer Part No:
FM25H20-DG
Newark Part No.:
08R5666
Technical Datasheet:
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Product Overview

The FM25H20-DG is a 2MB non-volatile memory FRAM, employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years wh...
  • 2MB Ferroelectric Random Access Memory (F-RAM) Logically Organized as 256 K x 8
  • High-endurance 100 Trillion (1014) Read/Writes
  • 151-year Data Retention
  • NoDelay™ Writes
  • Advanced High-reliability Ferroelectric Process
  • Very Fast Serial Peripheral Interface (SPI)
  • Up to 40MHz Frequency
  • Direct Hardware Replacement for Serial Flash and EEPROM
  • Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)
  • Sophisticated Write Protection Scheme
  • Hardware Protection Using Write Protect (WP) Pin
  • Software Protection Using Write Disable Instruction
  • Software Block Protection for 1/4, 1/2 or Entire Array
  • Low-power consumption, 1mA active current at 1MHz, 80μA standby current, 3μA sleep mode current

 

Product Information

Memory Type:
FRAM
Memory Size:
2Mbit
NVRAM Memory Configuration:
256K x 8bit
IC Interface Type:
Serial, SPI
Access Time:
-
Memory Case Style:
TDFN
No. of Pins:
8Pins
Supply Voltage Min:
2.7V
Supply Voltage Max:
3.6V
Operating Temperature Min:
-40°C
Operating Temperature Max:
85°C
Packaging:
Each
Product Range:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Computers & Computer Peripherals

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor