Low

OPTEK TECHNOLOGY  OP231  Infrared Emitter, Hermetic, 18 °, TO-46, 100 mA, 2 V, 500 ns, 250 ns

OPTEK TECHNOLOGY OP231
Technical Data Sheet (299.61KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The OP231 is a gallium aluminium arsenide (GaAIAs) Infrared Emitting Diode, mounted in a hermetic metal housing. The gallium aluminium arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. The device is lensed to provide a narrow beam angle (18°) between half power points. The 890nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle - combined with the specified radiant intensity of the OP231 series facilitates easy design in beam interrupt applications in conjunction with the OP800 or OP598 series photosensors. It is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors.
  • Focused and non-focused optical light pattern
  • Enhanced temperature range
  • Mechanically and spectrally matched to other OPTEK devices

 

Product Information

Viewing Angle:
18°
Diode Case Style:
TO-46
Forward Current If(AV):
100mA
Forward Voltage VF Max:
2V
Rise Time:
500ns
Fall Time tf:
250ns
Operating Temperature Min:
-65°C
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
-
Automotive Qualifications Standard:
-
Peak Wavelength:
890 nm
No. of Pins:
2
MSL:
-
Supply Voltage Range:
2V
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Wireless;
  • Automation & Process Control;
  • Sensing & Instrumentation;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.