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ON SEMICONDUCTOR  P2N2222AG  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 625 mW, 600 mA, 300

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Product Information


  • Collector Emitter Voltage V(br)ceo: 40V
  • DC Collector Current: 600mA
  • DC Current Gain hFE: 300
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 625mW
  • SVHC: No SVHC (17-Dec-2014)
  • Transistor Case Style: TO-92
  • Transistor Polarity: NPN
  • Transition Frequency Typ ft: 300MHz

Description

The P2N2222AG is a NPN Silicon Bipolar Transistor, designed for use in linear and switching applications.

Features:

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Epoxy, Molded Case
  • Lead and Mounting Surface Temperature for Soldering Purposes of 260 C Max. for 10 Seconds
  • Notch in Plastic Body Indicates Cathode Lead Polarity

Applications:

  • Signal Processing
  • Industrial

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View this product in our online catalog


This product also features on the following pages and catalog editions:

  •  130/312
  •  131/313

Availability

Availability: No Longer Manufactured


Substitutes

  • 35C0690 - Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.2W; DC Collector Current:800mA; DC Current Gain hFE:30; No. of Pins:3; MSL:-;RoHS Compliant: Yes
  • 31Y2183 - RoHS Compliant: Yes
  • 67H6854 - Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW; DC Collector Current:600mA; No. of Pins:3 ;RoHS Compliant: Yes
View all Substitutes

Price

Pricing is unavailable. Please contact customer services.

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Substitutes


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Avail Price Qty
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35C0690
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Suggested Substitutes
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