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ON SEMICONDUCTOR  NJT4031NT1G  Bipolar (BJT) Single Transistor, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE

ON SEMICONDUCTOR NJT4031NT1G
Technical Data Sheet (107.14KB) EN See all Technical Docs

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Product Overview

The NJT4031NT1G is a 3A NPN bipolar Power Transistor ideal for high speed switching applications where power saving is a concern. It is the combination of low saturation voltage and high gain.
  • Low collector-emitter saturation voltage
  • High DC current gain
  • High current-gain bandwidth product
  • Halogen-free
  • Minimized power loss
  • Very low current requirements
  • Ideal for high frequency designs
  • AEC-Q101 qualified and PPAP capable

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
215MHz
Power Dissipation Pd:
2W
DC Collector Current:
3A
DC Current Gain hFE:
100hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
AEC-Q101
MSL:
MSL 3 - 168 hours
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE

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TRANSISTOR, BIPOL, NPN, 40V

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