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ON SEMICONDUCTOR  NJD35N04G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 350 V, 90 MHz, 45 W, 4 A, 2000 hFE

ON SEMICONDUCTOR NJD35N04G
Technical Data Sheet (122.60KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
350V
Transition Frequency ft:
90MHz
Power Dissipation Pd:
45W
DC Collector Current:
4A
DC Current Gain hFE:
2000hFE
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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Bipolar (BJT) Single Transistor, NPN, 350 V, 90 MHz, 45 W, 4 A, 2000 hFE

ON SEMICONDUCTOR

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