NGTB20N120LWG - 

IGBT Single Transistor, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 Pins

NGTB20N120LWG - IGBT Single Transistor, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 Pins

The actual product may differ from image shown

Manufacturer Part No:
Newark Part No.:
Technical Datasheet:
See all Technical Docs

Product Overview

The NGTB20N120LWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
  • Low saturation voltage using Trench with field-stop technology
  • Low switching loss - Reduces system power dissipation
  • Low gate charge
  • Low conduction loss
  • 5μs Short-circuit capability


Power Management, Consumer Electronics, Industrial, Motor Drive & Control

Product Information

Find similar products Choose and modify the attributes above to find similar products.

Related Searches

US continental orders over $49 and under 50 pounds may qualify for free ground shipping. Click the link for the full Terms and Conditions of the offer.

No Longer Manufactured

No longer stocked:: No Longer Manufactured:: true

Customer Reviews

Customer Q&A Exchange


Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.


Select document type(s) you want to see and click “Apply Filters” button
Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.