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ON SEMICONDUCTOR  NGTB20N120LWG  IGBT Single Transistor, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 Pins

ON SEMICONDUCTOR NGTB20N120LWG
Technical Data Sheet (172.33KB) EN See all Technical Docs

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Product Overview

The NGTB20N120LWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
  • Low saturation voltage using Trench with field-stop technology
  • Low switching loss - Reduces system power dissipation
  • Low gate charge
  • Low conduction loss
  • 5μs Short-circuit capability

 

Product Information

DC Collector Current:
40A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
192W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Industrial;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

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