Low

NGTB20N120LWG - 

IGBT Single Transistor, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 Pins

ON SEMICONDUCTOR NGTB20N120LWG

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Manufacturer Part No:
NGTB20N120LWG
Newark Part No.:
07W7306
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
192W
:
1.2kV
:
-
:
40A
:
1.8V
:
-
:
150°C
:
3Pins
:
TO-247
:
-
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Product Overview

The NGTB20N120LWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
  • Low saturation voltage using Trench with field-stop technology
  • Low switching loss - Reduces system power dissipation
  • Low gate charge
  • Low conduction loss
  • 5μs Short-circuit capability

Applications

Power Management, Consumer Electronics, Industrial, Motor Drive & Control