Low

NGTB20N120IHSWG - 

IGBT Single Transistor, 40 A, 2.1 V, 156 W, 1.2 kV, TO-247, 3 Pins

ON SEMICONDUCTOR NGTB20N120IHSWG

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Manufacturer Part No:
NGTB20N120IHSWG
Newark Part No.:
60W1753
Technical Datasheet:
(EN)
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Product Information

:
156W
:
-
:
1.2kV
:
150°C
:
3Pins
:
-
:
40A
:
TO-247
:
2.1V
:
-
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Product Overview

The NGTB20N120IHSWG is an Insulated Gate Bipolar Transistor features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
  • Low saturation voltage using Trench with field-stop technology
  • Low switching loss - Reduces system power dissipation
  • Optimized for low case temperature in IH cooker application
  • Low gate charge
  • Low conduction loss

Applications

HVAC, Consumer Electronics, Power Management

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INFINEON

IGBT Single Transistor, 50 A, 1.9 V, 180 W, 1.2 kV, TO-247AC, 3 Pins

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