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ON SEMICONDUCTOR  NGB8207BNT4G  IGBT Single Transistor, 20 A, 1.5 V, 165 W, 365 V, TO-263, 3 Pins

ON SEMICONDUCTOR NGB8207BNT4G
Technical Data Sheet (126.23KB) EN See all Technical Docs

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Product Information

DC Collector Current:
20A
Collector Emitter Saturation Voltage Vce(on):
1.5V
Power Dissipation Pd:
165W
Collector Emitter Voltage V(br)ceo:
365V
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Transistor Type:
IGBT
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

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