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ON SEMICONDUCTOR  MMUN2233LT1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 (Ratio), SOT-23

ON SEMICONDUCTOR MMUN2233LT1G
Technical Data Sheet (104.22KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MMUN2233LT1G is a NPN Transistor with monolithic bias resistor network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
  • Simplifies circuit design
  • Reduces component count
  • AEC-Q101 Qualified
  • PPAP capable

 

Product Information

Collector Emitter Voltage V(br)ceo:
50V
Continuous Collector Current Ic:
100mA
Base Input Resistor R1:
4.7kohm
Base-Emitter Resistor R2:
47kohm
Resistor Ratio, R1 / R2:
0.1(Ratio)
RF Transistor Case:
SOT-23
No. of Pins:
3 Pin
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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