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ON SEMICONDUCTOR  MMUN2211LT1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 (Ratio), SOT-23

ON SEMICONDUCTOR MMUN2211LT1G
Technical Data Sheet (143.35KB) EN See all Technical Docs

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Product Overview

The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
  • Simplifies circuit design
  • Compact board space
  • Reduced component count
  • AEC-Q101 qualified
  • Base input resistor is 10Kohm
  • Base emitter resistor is 10kohm
  • Collector emitter voltage VCEO of 50VDC
  • Continuous collector current of 100mAdc

 

Product Information

Collector Emitter Voltage V(br)ceo:
50V
Continuous Collector Current Ic:
100mA
Base Input Resistor R1:
10kohm
Base-Emitter Resistor R2:
10kohm
Resistor Ratio, R1 / R2:
1(Ratio)
RF Transistor Case:
SOT-23
No. of Pins:
3 Pin
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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