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MMUN2211LT1G - 

Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 (Ratio), SOT-23

ON SEMICONDUCTOR MMUN2211LT1G

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Manufacturer Part No:
MMUN2211LT1G
Newark Part No.:
88H4911
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
SOT-23
:
3 Pin
:
-
:
50V
:
1(Ratio)
:
100mA
:
10kohm
:
-
:
10kohm
:
MSL 1 - Unlimited
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Product Overview

The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
  • Simplifies circuit design
  • Compact board space
  • Reduced component count
  • AEC-Q101 qualified
  • Base input resistor is 10Kohm
  • Base emitter resistor is 10kohm
  • Collector emitter voltage VCEO of 50VDC
  • Continuous collector current of 100mAdc

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial

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ON SEMICONDUCTOR

Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 (Ratio), SOT-23

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