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ON SEMICONDUCTOR  MMUN2112LT1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 22 kohm, 22 kohm, 1 (Ratio), SOT-23

ON SEMICONDUCTOR MMUN2112LT1G
Manufacturer Part No:
MMUN2112LT1G
Newark Part No.:
85W3167
Technical Datasheet:
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Product Overview

The MMUN2112LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
  • Simplifies circuit design
  • Reduces board space
  • Reduces component count

 

Product Information

Collector Emitter Voltage V(br)ceo:
50V
Continuous Collector Current Ic:
100mA
Base Input Resistor R1:
22kohm
Base-Emitter Resistor R2:
22kohm
Resistor Ratio, R1 / R2:
1(Ratio)
RF Transistor Case:
SOT-23
No. of Pins:
3 Pin
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (20-Jun-2016)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, Digital, PNP, 50 V, 250 MHz, 200 mW, 100 mA, 56 hFE

ROHM

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Contact us for more availability or to purchase on backorder

Price for: Each (Supplied on Cut Tape)

10+ $0.063 100+ $0.054 250+ $0.047 500+ $0.04 More pricing

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