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ON SEMICONDUCTOR  MMBT6427LT1G  Bipolar (BJT) Single Transistor, Darlington, NPN, 40 V, 300 mW, 500 mA, 200 hFE

ON SEMICONDUCTOR MMBT6427LT1G
Technical Data Sheet (116.53KB) EN See all Technical Docs

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Product Overview

The MMBT6427LT1G is a NPN bipolar Darlington Transistor designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the package which is designed for lower power surface-mount applications.
  • AEC-Q101 qualified and PPAP capable

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
-
Power Dissipation Pd:
300mW
DC Collector Current:
500mA
DC Current Gain hFE:
200hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, Darlington, NPN, 40 V, 300 mW, 500 mA, 200 hFE

ON SEMICONDUCTOR

6,000 in stock

Price for: Each (Supplied on Full Reel)

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